DMT10H010LSS-13
Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMT10H010LSS-13
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 1.9 W 100 V Continuous Drain Current (ID):29.5 A 53.7 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Max Power Dissipation | 1.4 W |
| Power Dissipation | 1.9 W |
| Number of Channels | 1 |
| Input capacitance | 3 nF |
| Continuous Drain Current (ID) | 29.5 A |
| Rds On Max | 9.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge | 53.7 nC |
| Drain to Source Resistance | 14.5 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2609
Distributors
pcbx
pcbxUnit Price$1.03276
Ext.Price$1.03276
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.03276 | $1.03276 |
| 10 | $0.77627 | $7.76270 |
| 25 | $0.68904 | $17.22600 |
| 50 | $0.61161 | $30.58050 |
| 100 | $0.54288 | $54.28800 |
| 300 | $0.48509 | $145.52700 |
| 500 | $0.43345 | $216.72500 |
| 1000 | $0.40010 | $400.10000 |
| 3000 | $0.36478 | $1094.34000 |
| 5000 | $0.33257 | $1662.85000 |